1 edition 1.2 july 1999 FHX45X gaas fet & hemt chips item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure associated gain symbol i dss 10 40 85 45 65 - -0.1 -1.0 -2.0 -3.0 - - - 0.55 0.65 10.0 12.0 - v ds = 2v, v gs =0v v ds = 2v, i ds =10ma v ds = 2v, i ds =1ma v ds = 2v, i ds = 10ma, f = 12ghz igs = -10 a ma ms v v db db gm vp v gso nf g as condition unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) note: rf parameter sample size 10pcs. criteria (accept/reject)=(2/3) channel to case - 155 200 c/w thermal resistance r th the chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 3.5 -3.0 290 -65 to +175 175 v v mw c c p t* t stg t ch unit rating absolute maximum rating (ambient temperature ta=25 c) *note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 2 volts. 2. the forward and reverse gate currents should not exceed 0.1 and -0.075 ma respectively with gate resistance of 4000 ? . 3. the operating channel temperature (t ch ) should not exceed 80 c. gate drain source gate features ?low noise figure: 0.55db (typ.)@f=12ghz ?high associated gain: 12.0db (typ.)@f=12ghz ?lg 0.15 m, wg = 280 m ?gold gate metallization for high reliability description the FHX45X is a super high electron mobility transistor (superhemt tm ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18ghz frequency range. the device is well suited for telecommunication, dbs, tvro, vsat or other low noise applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FHX45X gaas fet & hemt chips nf & gas vs. i ds nf & gas vs. frequency drain current vs. drain-source voltage FHX45X noise parameters v ds =2v, i ds =10ma 3 4 f=12ghz v ds =2v freq. (ghz) opt (mag) (ang) nfmin (db) rn/50 v ds =2v i ds =10ma gas gas nf nf 2 1 0 12 13 14 11 10 9 8 7 10 20 30 2 4 6 8 10 12 20 1234 drain current (ma) frequency (ghz) drain-source voltage (v) noise figure (db) 50 40 30 0 10 2 3 1 0 10 15 5 0 drain current (ma) noise figure (db) associated gain (db) associated gain (db) 2 4 6 8 10 12 14 16 18 0.83 0.72 0.65 0.62 0.61 0.60 0.58 0.55 0.47 12.7 28.2 45.2 62.6 79.4 94.5 106.7 115.0 118.4 0.28 0.30 0.34 0.39 0.47 0.55 0.67 0.81 1.00 0.21 0.19 0.17 0.15 0.13 0.11 0.10 0.09 0.09 v gs =0v -0.2v -0.4v -0.6v -0.8v -1.0v power derating curve 50 100 150 200 ambient temperature ( c) 350 300 250 200 150 100 0 0 50 total power dissipation (w) ga (max) & |s 21 | 2 vs. frequency v ds =2v i ds =10ma ga (max) |s 21 | 2 15 20 10 5 0 4681012 20 frequency (ghz) gain (db)
3 FHX45X gaas fet & hemt chips +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.16 0.04 0.08 0.12 2 1 3 4 0.1 ghz 0.1 ghz 0.1 ghz 0.1 ghz 10 5 5 15 15 10 10 18 ghz 10 15 1 1 18 ghz 5 5 1 18 ghz 1 18 ghz 5 100 10 25 50 ? s-parameters v ds = 2v, i ds = 10ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 1.000 -1.4 6.039 178.9 .002 89.3 .533 -0.9 500 0.998 -6.8 6.025 174.4 .009 86.4 .531 -4.6 1000 0.991 -13.6 5.981 168.8 .017 82.8 .528 -9.2 2000 0.966 -27.0 5.818 157.8 .033 75.9 .516 -18.0 3000 0.928 -39.9 5.572 147.4 .048 69.6 .497 -26.4 4000 0.883 -52.1 5.277 137.7 .060 64.1 .475 -34.2 5000 0.835 -63.6 4.959 128.8 .070 59.3 .452 -41.4 6000 0.788 -74.5 4.640 120.5 .078 55.4 .430 -48.0 7000 0.744 -84.8 4.333 112.9 .085 52.3 .408 -54.0 8000 0.705 -94.5 4.046 105.8 .090 49.9 .389 -59.6 9000 0.671 -103.8 3.782 99.3 .094 48.1 .372 -64.9 10000 0.642 -112.7 3.542 93.2 .097 46.9 .358 -70.0 11000 0.618 -121.1 3.324 87.5 .100 46.2 .346 -74.9 12000 0.599 -129.3 3.126 82.1 .103 46.0 .336 -79.7 13000 0.584 -137.1 2.948 77.0 .106 46.2 .329 -84.4 14000 0.573 -144.6 2.786 72.1 .109 46.7 .323 -89.0 15000 0.566 -151.7 2.639 67.4 .112 47.3 .319 -93.7 16000 0.561 -158.5 2.504 62.9 .116 48.2 .317 -98.4 17000 0.560 -165.1 2.382 58.5 .120 49.1 .317 -103.1 18000 0.562 -171.3 2.268 54.3 .125 50.0 .318 -107.8 note:* the data includes bonding wires. n: number of wires gate n=2 (0.3mm length, 25m dia au wire) drain n=2 (0.3mm length, 25m dia au wire) source n=4 (0.3mm length, 25m dia au wire)
for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 4 chip outline (unit: m) 90 70 100 450 20 160 350 20 75 60 50 die thickness: 100 20 m gate drain source gate 65 FHX45X gaas fet & hemt chips superhemt tm is a trademark of fujitsu limited.
|
